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TW083N65C,S1F
Toshiba Semiconductor and Storage
Manufacturer Part #:
TW083N65C,S1F
Manufacturer:
Package:
TO-247
Data Code:
-
Datasheet:
-
Description:
G3 650V SIC-MOSFET TO-247 83MOH
Quantity:
In Stock : 172
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Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$11.685
$11.685
10
$10.29515
$102.9515
100
$8.90416
$890.416
500
$8.06939
$4034.695
1000
$7.40158
$7401.58
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| Mfr | Toshiba Semiconductor and Storage |
| Series | - |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | +25V, -10V |
| Technology | SiCFET (Silicon Carbide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 5V @ 600µA |
| Operating Temperature | 175°C |
| Rds On (Max) @ Id, Vgs | 113mOhm @ 15A, 18V |
| Power Dissipation (Max) | 111W (Tc) |
| Supplier Device Package | TO-247 |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 18 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 873 pF @ 400 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
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