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TPW2900ENH,L1Q
Toshiba Semiconductor and Storage
Manufacturer Part #:
TPW2900ENH,L1Q
Manufacturer:
Package:
8-DSOP Advance
Data Code:
-
Datasheet:
-
Description:
PB-F POWER MOSFET TRANSISTOR DSO
Quantity:
In Stock : 1
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Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$2.7265
$2.7265
10
$2.26385
$22.6385
100
$1.80177
$180.177
500
$1.52459
$762.295
1000
$1.29359
$1293.59
2000
$1.22892
$2457.84
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| Mfr | Toshiba Semiconductor and Storage |
| Series | U-MOSVIII-H |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Operating Temperature | 150°C |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 16.5A, 10V |
| Power Dissipation (Max) | 800mW (Ta), 142W (Tc) |
| Supplier Device Package | 8-DSOP Advance |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
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