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SISS66DN-T1-GE3
Vishay Siliconix
Manufacturer Part #:
SISS66DN-T1-GE3
Manufacturer:
Package:
PowerPAK® 1212-8S
Data Code:
-
Datasheet:
Description:
MOSFET N-CH 30V 49.1/178.3A PPAK
Quantity:
In Stock : 5900
Share
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$1.3775
$1.3775
10
$1.1267
$11.267
100
$0.87647
$87.647
500
$0.74293
$371.465
1000
$0.6052
$605.2
Not the price you want? Send RFQ Now and we'll contact you ASAP.
| Mfr | Vishay Siliconix |
| Series | TrenchFET® Gen IV |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | +20V, -16V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Schottky Diode (Body) |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® 1212-8S |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Base Product Number | SISS66 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 1.38mOhm @ 20A, 10V |
| Power Dissipation (Max) | 5.1W (Ta), 65.8W (Tc) |
| Supplier Device Package | PowerPAK® 1212-8S |
| Gate Charge (Qg) (Max) @ Vgs | 85.5 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3327 pF @ 15 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 49.1A (Ta), 178.3A (Tc) |
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