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SISS10ADN-T1-GE3
Vishay Siliconix
Manufacturer Part #:
SISS10ADN-T1-GE3
Manufacturer:
Package:
PowerPAK® 1212-8S
Data Code:
-
Datasheet:
Description:
MOSFET N-CH 40V 31.7A/109A PPAK
Quantity:
In Stock : 9000
Share
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.8835
$0.8835
10
$0.72105
$7.2105
100
$0.56097
$56.097
500
$0.47547
$237.735
1000
$0.38733
$387.33
Not the price you want? Send RFQ Now and we'll contact you ASAP.
| Mfr | Vishay Siliconix |
| Series | TrenchFET® Gen IV |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | +20V, -16V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® 1212-8S |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Base Product Number | SISS10 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 2.65mOhm @ 15A, 10V |
| Power Dissipation (Max) | 4.8W (Ta), 56.8W (Tc) |
| Supplier Device Package | PowerPAK® 1212-8S |
| Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 40 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3030 pF @ 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 31.7A (Ta), 109A (Tc) |
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