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SIS410DN-T1-GE3
Vishay Siliconix
Manufacturer Part #:
SIS410DN-T1-GE3
Manufacturer:
Package:
PowerPAK® 1212-8
Data Code:
-
Datasheet:
Description:
MOSFET N-CH 20V 35A PPAK 1212-8
Quantity:
In Stock : 22413
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Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.9785
$0.9785
10
$0.8778
$8.778
100
$0.68409
$68.409
500
$0.56513
$282.565
1000
$0.44616
$446.16
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| Mfr | Vishay Siliconix |
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® 1212-8 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Base Product Number | SIS410 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 4.8mOhm @ 20A, 10V |
| Power Dissipation (Max) | 3.8W (Ta), 52W (Tc) |
| Supplier Device Package | PowerPAK® 1212-8 |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
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