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SIHU4N80AE-GE3
Vishay Siliconix
Manufacturer Part #:
SIHU4N80AE-GE3
Manufacturer:
Package:
IPAK (TO-251)
Data Code:
-
Datasheet:
Description:
MOSFET N-CH 800V 4.3A IPAK
Quantity:
In Stock : 3000
Share
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$1.4725
$1.4725
10
$1.20745
$12.0745
100
$0.93898
$93.898
500
$0.79589
$397.945
1000
$0.64833
$648.33
2000
$0.61032
$1220.64
5000
$0.58126
$2906.3
10000
$0.55443
$5544.3
Not the price you want? Send RFQ Now and we'll contact you ASAP.
| Mfr | Vishay Siliconix |
| Series | E |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Long Leads, IPak, TO-251AB |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Base Product Number | SIHU4 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 1.27Ohm @ 2A, 10V |
| Power Dissipation (Max) | 69W (Tc) |
| Supplier Device Package | IPAK (TO-251) |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 800 V |
| Input Capacitance (Ciss) (Max) @ Vds | 622 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Tc) |
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