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SIHD6N80E-GE3
Vishay Siliconix
Manufacturer Part #:
SIHD6N80E-GE3
Manufacturer:
Package:
TO-252AA
Data Code:
-
Datasheet:
Description:
MOSFET N-CH 800V 5.4A DPAK
Quantity:
In Stock : 2062
Share
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$1.9475
$1.9475
10
$1.615
$16.15
100
$1.28535
$128.535
500
$1.08763
$543.815
1000
$0.92284
$922.84
2000
$0.8767
$1753.4
5000
$0.84374
$4218.7
10000
$0.81581
$8158.1
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| Mfr | Vishay Siliconix |
| Series | E |
| Package | Bulk |
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Base Product Number | SIHD6 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 940mOhm @ 3A, 10V |
| Power Dissipation (Max) | 78W (Tc) |
| Supplier Device Package | TO-252AA |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 800 V |
| Input Capacitance (Ciss) (Max) @ Vds | 827 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 5.4A (Tc) |
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