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SIHD6N65E-GE3
Vishay Siliconix
Manufacturer Part #:
SIHD6N65E-GE3
Manufacturer:
Package:
TO-252AA
Data Code:
-
Datasheet:
Description:
MOSFET N-CH 650V 7A DPAK
Quantity:
In Stock : 2880
Share
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$1.4725
$1.4725
10
$1.22265
$12.2265
100
$0.97289
$97.289
500
$0.82325
$411.625
1000
$0.69851
$698.51
2000
$0.66359
$1327.18
5000
$0.63864
$3193.2
10000
$0.6175
$6175
Not the price you want? Send RFQ Now and we'll contact you ASAP.
| Mfr | Vishay Siliconix |
| Series | - |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Base Product Number | SIHD6 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 3A, 10V |
| Power Dissipation (Max) | 78W (Tc) |
| Supplier Device Package | TO-252AA |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 820 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
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