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SIHD2N80E-GE3
Vishay Siliconix
Manufacturer Part #:
SIHD2N80E-GE3
Manufacturer:
Package:
TO-252AA
Data Code:
-
Datasheet:
Description:
MOSFET N-CH 800V 2.8A DPAK
Quantity:
In Stock : 1
Share
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$1.3015
$1.3015
10
$1.0621
$10.621
100
$0.82612
$82.612
500
$0.70024
$350.12
1000
$0.57041
$570.41
2000
$0.53698
$1073.96
5000
$0.51141
$2557.05
10000
$0.4878
$4878
Not the price you want? Send RFQ Now and we'll contact you ASAP.
| Mfr | Vishay Siliconix |
| Series | E |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Base Product Number | SIHD2 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 2.75Ohm @ 1A, 10V |
| Power Dissipation (Max) | 62.5W (Tc) |
| Supplier Device Package | TO-252AA |
| Gate Charge (Qg) (Max) @ Vgs | 19.6 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 800 V |
| Input Capacitance (Ciss) (Max) @ Vds | 315 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Tc) |
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