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SIHB30N60E-GE3
Vishay Siliconix
Manufacturer Part #:
SIHB30N60E-GE3
Manufacturer:
Package:
D²PAK (TO-263)
Data Code:
-
Datasheet:
Description:
MOSFET N-CH 600V 29A D2PAK
Quantity:
In Stock : 328
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Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$5.5385
$5.5385
10
$4.978
$49.78
100
$4.07882
$407.882
500
$3.47223
$1736.115
1000
$2.92839
$2928.39
2000
$2.78198
$5563.96
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| Mfr | Vishay Siliconix |
| Series | - |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Base Product Number | SIHB30 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 15A, 10V |
| Power Dissipation (Max) | 250W (Tc) |
| Supplier Device Package | D²PAK (TO-263) |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
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