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BSC12DN20NS3GATMA1
Infineon Technologies
Manufacturer Part #:
BSC12DN20NS3GATMA1
Manufacturer:
Package:
PG-TDSON-8-5
Data Code:
-
Datasheet:
-
Description:
MOSFET N-CH 200V 11.3A 8TDSON
Quantity:
In Stock : 3835
Share
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$1.425
$1.425
10
$1.1666
$11.666
100
$0.90753
$90.753
500
$0.76923
$384.615
1000
$0.62663
$626.63
2000
$0.5899
$1179.8
Not the price you want? Send RFQ Now and we'll contact you ASAP.
| Mfr | Infineon Technologies |
| Series | OptiMOS™ |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 25µA |
| Base Product Number | BSC12DN20 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 5.7A, 10V |
| Power Dissipation (Max) | 50W (Tc) |
| Supplier Device Package | PG-TDSON-8-5 |
| Gate Charge (Qg) (Max) @ Vgs | 8.7 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 680 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 11.3A (Tc) |
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